Course Material on Switched Mode Power Conversion (2nd by V. Ramanarayanan

By V. Ramanarayanan

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Extra resources for Course Material on Switched Mode Power Conversion (2nd Edition)

Example text

1 2. For the switching devices shown in Fig. 2 (a) and (b), show on the v-i plane, the possible steady state operating points. 3. The power converter in Fig. 3 has two power switching devices namely T1 P and T2 P . The source voltage is 50V. The inductor current is steady 5A without any ripple. On the v-i plane mark the operating points of the switches T1 P and T2 P . T1 P may be realized by a controlled power-switching device (BJT, MOSFET or IGBT). T2 P may be realized by an uncontrolled diode.

22 is identical to the conducting and blocking states of GTOs. The major difference with IGCT is that the device can transit from conducting state to blocking state instantaneously. The GTO does so via an intermediate state as illustrated in Fig. 18. In IGCT technology, elimination of the GTO zone is achieved by quickly diverting the entire anode current away from the cathode and out of the gate. The device becomes a transistor prior to it having to withstand any blocking voltage at all. Turn-off occurs after the device has become a transistor, no external dv/dt protection is required.

22 is identical to the conducting and blocking states of GTOs. The major difference with IGCT is that the device can transit from conducting state to blocking state instantaneously. The GTO does so via an intermediate state as illustrated in Fig. 18. In IGCT technology, elimination of the GTO zone is achieved by quickly diverting the entire anode current away from the cathode and out of the gate. The device becomes a transistor prior to it having to withstand any blocking voltage at all. Turn-off occurs after the device has become a transistor, no external dv/dt protection is required.

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